The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Mar. 25, 1999
Applicant:
Inventors:
Wei-Yung Hsu, Dallas, TX (US);
Jiong-Ping Lu, Dallas, TX (US);
August J. Fischer, Dallas, TX (US);
Ming-Jang Hwang, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 ; B05D 1/36 ; C23C 1/600 ;
U.S. Cl.
CPC ...
B05D 5/12 ; B05D 1/36 ; C23C 1/600 ;
Abstract
In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon with tungsten, which provides a nucleation layer for bulk tungsten deposition.