The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Oct. 20, 2000
Nguyen Khe, Los Altos, CA (US);
Tsing-Chow Wang, Cupertino, CA (US);
Aptos Corporation, Milpitas, CA (US);
Abstract
Within a method for forming a patterned polyimide layer, there is first provided a substrate. There is then formed over the substrate a blanket polyamic acid layer. There is then formed upon the blanket polyamic acid layer a patterned photoresist layer. There is then hardened the patterned photoresist layer to form a hardened patterned photoresist layer. There is then patterned, while employing the hardened patterned photoresist layer as an etch mask layer, the blanket polyamic acid layer to form a patterned polyamic acid layer. Finally, there is then thermally annealed the patterned polyamic acid layer to form a patterned polyimide layer. By employing as an etch mask when forming from the blanket polyamic acid layers the patterned polyamic acid layer the hardened patterned photoresist layer, rather than an unhardened patterned photoresist layer, the patterned polyamic acid layer, and consequently also the patterned polyimide layer, are formed with enhanced dimensional control.