The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Dec. 03, 2001
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
The invention teaches the creation of borderless contact holes by using multiple layers of overlying dielectric, having different, interdependent etch rates, that function as etch stop layers for the creation of the borderless contact holes through a layer of overlying dielectric.
Liu, Meng-Chang. (2003). Method of fabricating borderless contact using graded-stair etch stop layers (U.S. Patent No. 6635576). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6635576
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile