The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jan. 31, 2001
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for preventing polycide gate spiking, which essentially comprises the following steps: forms an oxide layer on a substrate; forming a polysilicon layer on the oxide layer; sputtering a barrier layer on the polysilicon layer; performing a first rapid thermal process; sputtering a silicide layer on the barrier layer; performing a photolithography process and an etching process to remove part of the silicide layer, part of the barrier layer and part of the polysilicon layer to form a polycide gate; and performing a second rapid thermal process. Further, as it is necessary to use both rapid thermal processes, the invention can be expanded such that only one rapid thermal process is applied. Both rapid thermal processes use almost no oxygen.