The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jul. 06, 2001
Applicant:
Inventors:
Shun-Li Lin, Hsinchu, TW;
Chi-Fang Hsieh, Kaohsiung, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 ;
U.S. Cl.
CPC ...
G03F 7/40 ;
Abstract
The invention provides a method for reducing roughness of the photoresist through cross-linking reaction of deposit and the photoresist. The method comprises at least performing an exposure process to a substrate having a photoresist pattern and performing a post-exposure bake process for activating the surface of photoresist pattern. A material layer is formed to cover the surface of the photoresist pattern. The material layer cross-links with the hydrogen ions on the surface of the photoresist pattern, so that a filling layer is formed to fills asperity or the rough regions of the photoresist pattern.