The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jul. 24, 2001
Akihiro Kimura, Gunma, JP;
Hideki Sato, Gunma, JP;
Ryuji Kono, Gunma, JP;
Masahiro Kato, Gunma, JP;
Masaro Tamatsuka, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
There are provided a silicon wafer for epitaxial growth wherein a void type defect is not exposed on the surface where an epitaxial layer is grown, and a method for producing an epitaxial wafer comprising measuring the number of the void type defects exposed on the surface of a silicon wafer and/or the number of the void type defects which exist in the part to the depth of at least 10 nm from the surface of the silicon wafer, choosing the silicon wafer wherein the number of these void type defects is smaller than the predetermined value, and growing an epitaxial layer on the surface of the chosen silicon wafer. Thereby, there can be provided a silicon wafer for epitaxial growth wherein generation of SF is reduced and epitaxial wafer, and a method for producing it.