The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Jun. 29, 2000
Jeffrey Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A buried channel device structure for an electrostatic discharge protection circuit capable of minimizing the effect on the electrostatic discharge protection circuit due to current flowing close to gate oxide layer. A p+ ion-doped region is formed above a p-type substrate. The p+ ion-doped region serves as a gate terminal. A first and a second n+ ion-doped region are also formed in the p-type substrate on each side of the p+ gate terminal. In addition, an n-doped region is formed in the p-type substrate under the p+ gate terminal between the first and the second n+ ion-doped region. A similar buried channel device structure can also be formed on an n-type structure.