The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2003

Filed:

Nov. 30, 2001
Applicant:
Inventors:

Tsong-Minn Hsieh, Miaoli, TW;

Ruey Jiunn Guo, Taipei Hsien, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

A process of forming an anti-fuse. First, an inter-metal dielectric layer, in which a funnel-shaped via is formed, is formed on a substrate. Next, a first conductive layer is formed over the substrate and filled into the funnel-shaped via. Subsequently, by, for example, a chemical mechanical polishing process, the first conductive layer outside the funnel-shaped via is removed to form a conductive plug. Afterward, an oxide chemical mechanical polishing process is performed to smooth the surface of the conductive plug. Next, a dielectric layer is formed on the top side of the conductive plug, and then a top plate is formed on the dielectric layer. Subsequently, an insulating layer is formed over the substrate, wherein the insulating layer is provided with a via and the via exposes the top plate. Finally, a second conductive layer is formed over the substrate and filled into the via.


Find Patent Forward Citations

Hsieh, Tsong-Minn. (2003). Process of fabricating an anti-fuse for avoiding a key hole exposed (U.S. Patent No. 6617233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6617233

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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