The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Mar. 16, 2001
James Stuart Dunn, Jericho, VT (US);
David L. Harame, Essex Junction, VT (US);
Jeffrey Bowman Johnson, Essex Junction, VT (US);
Robb Allen Johnson, S. Burlington, VT (US);
Louis DeWolf Lanzerotti, Burlington, VT (US);
Stephen Arthur St. Onge, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.