The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Sep. 28, 2001
Applicant:
Inventors:
Mahalingam Nandakumar, Plano, TX (US);
Dixit Kapila, Plano, TX (US);
Seetharaman Sridhar, Irving, TX (US);
Assignee:
Texas Instruments Incorpated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
Retrograde wells are formed by implanting through nitride films ( ). Nitride films ( ) are formed after STI ( ) formation. By selectively masking a portion of the wafer with photoresist ( ) after portions of a retrograde well are formed ( and ) the channeling of the subsequent zero degree implants is reduced.
Nandakumar, Mahalingam. (2003). Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitride (U.S. Patent No. 6617217). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6617217
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile