The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Apr. 25, 2002
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/166 ; H01L 2/1302 ; G01R 3/126 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/166 ; H01L 2/1302 ; G01R 3/126 ;
Abstract
A new method is provided to monitor and to prevent IMD oxide irregularities such as IMD oxide cracks. A monitoring pattern is inserted in the test line of the fabrication substrate to monitor the strength of the created layer of IMD oxide. Variations in the characteristics of the created layer of IMD oxide can in this manner be detected. In addition, design rules are provided that are aimed at avoiding layers of IMD oxide that have proven or are known to be particularly prone to the occurrence of IMD oxide cracks.
Chen, Shin-Kai. (2003). Imd oxide crack monitor pattern and design rule (U.S. Patent No. 6613592). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6613592
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile