The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2003

Filed:

Jun. 12, 2001
Applicant:
Inventors:

Paul G. Filseth, Los Gatos, CA (US);

Mario Garza, Sunnyvale, CA (US);

Assignee:

LSI Logic Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ;
U.S. Cl.
CPC ...
G06F 1/750 ;
Abstract

A mask is designed for use in a photolithographic process to offset effects of light diffraction. At least one region having a length along each edge of a mask feature is defined. Error values at selected points on the mask are derived from an aerial image of the mask features and a target light intensity measured during IC fabrication process development. A matrix is derived representing the contributions of light amplitude due to movement of each region in a direction normal to the region. The amount of movement of each region is based on least-squares fitting the linear expressions in the matrix to the error values. The amount of movement may be adjusted for movement of an adjacent region.


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