The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
May. 25, 2000
Method to define and tailor process limited lithographic features using a modified hard mask process
Applicant:
Inventors:
Douglas S. Armbrust, Gloucester, MA (US);
Dale W. Martin, Hyde Park, VT (US);
Jed H. Rankin, Burlington, VT (US);
Sylvia Tousley, South Burlington, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1461 ;
Abstract
A method to define and tailor process limited lithographic features is provided. The method may be used to form sub lithographic spaces between features on a semiconductor wafer. A mask is formed and patterned on the wafer. Spacers are formed on sidewalls of the mask. The pattern of the mask and spacers is then transferred to an underlying layer.