The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Jan. 29, 2002
Applicant:
Inventors:
Kevin G. Donohoe, Boise, ID (US);
David S. Becker, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ; H01L 2/1308 ; H05H 1/46 ; C03C 1/500 ; C03C 2/568 ;
U.S. Cl.
CPC ...
H01L 2/13065 ; H01L 2/1308 ; H05H 1/46 ; C03C 1/500 ; C03C 2/568 ;
Abstract
A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF and CH F , delivered at flow rates on the order of between about 10 and 40 sccm for CHF and between about 10 and 40 sccm for CH F . Small quantities, on the order of 10 sccm or less, of other gases such as C HF and CF may be added.