The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2003
Filed:
Sep. 19, 2001
Kouichirou Tsujita, Tokyo, JP;
Atsumi Yamaguchi, Tokyo, JP;
Junjiro Sakai, Tokyo, JP;
Kouji Oda, Tokyo, JP;
Koichiro Narimatsu, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more than 2.5, the imaginary part is set in the range of not less than 0.9 nor more than 1.7, and the film thickness is set in the range of not less than 20 nm nor more than 60 nm. For the upper p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.7 nor more than 2.4, the imaginary part is set in the range of not less than 0.15 nor more than 0.75, and the film thickness is set in the range of not less than 10 nm nor more than 40 nm.