The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Jul. 29, 2002
Applicant:
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Reda Razouk, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ;
U.S. Cl.
CPC ...
H01L 2/7082 ;
Abstract
A low-power high-frequency bipolar transistor is formed to have a small self-aligned base region that reduces the base-to-collector capacitance, and small self-aligned base and emitter contacts that reduce the base-to-emitter capacitance and the base resistance. The base and emitter contacts are formed to have sub-lithographic feature sizes.