The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Aug. 15, 2000
Yukio Nishida, Hyogo, JP;
Hirokazu Sayama, Hyogo, JP;
Hidekazu Oda, Hyogo, JP;
Toshiyuki Oishi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device capable of preventing variations in threshold voltage and having high reliability is provided. The semiconductor device includes a semiconductor substrate having a semiconductor region, and a field-effect transistor. The field-effect transistor includes a gate electrode, source and drain regions, and a channel region. The channel region includes a pair of lightly doped impurity regions having a relatively low impurity concentration as well as a heavily doped impurity region located between the lightly doped impurity regions and having a relatively high impurity concentration.