The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jun. 19, 2001
Tsung-Tang Hsieh, Taipei Hsien, TW;
Cheng-Yuan Tsai, Yunlin Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabrication method for a low dielectric constant (k) material layer is described. A high molecular weight material layer is formed on a substrate. The high molecular weight material layer is then cured. A bonding material layer is formed on the high molecular weight material layer, wherein a major component in the bonding material layer is an organic compound, wherein the organic compound has a silicon-containing moiety and an unsaturated hydrocarbon moiety. The bonding material layer is further cured, allowing the organic silicon compound to cross-link within the high molecular weight material layer to form a high molecular weight material layer with a silicon rich surface. Moreover, the curing for the high molecular weight material layer and for the bonding material layer can conduct concurrently.