The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Oct. 25, 2000
Yasuhiro Kanda, Tokyo, JP;
Mitsuo Kimoto, Tokyo, JP;
Kazuyoshi Maekawa, Tokyo, JP;
Noboru Sekiguchi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing a semiconductor device having a polymetal wiring structure fabricated by a polycrystalline silicon film, a reaction preventing film, and a tungsten film comprising steps of forming a polycrystalline silicon film and a tungsten nitride film on a silicon substrate ; forming a tungsten film using a target of tungsten containing fluorine of 10 ppm or less by a sputtering method; and forming a gate electrode by patterning a polycrystalline silicon film , the tungsten nitride film , and the tungsten film , whereby a content of fluorine can be reduced, a film separation is prevented, and a preferable transistor property is obtainable.