The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Aug. 20, 2001
Applicant:
Inventors:
Toshihiko Tanaka, Tokyo, JP;
Norio Hasegawa, Hinode, JP;
Kazutaka Mori, Kokubunji, JP;
Ko Miyazaki, Kokubunji, JP;
Tsuneo Terasawa, Ome, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
A method is provided for well printing a specified pattern even when the exposure treatment using a resist mask uses exposure light with a wavelength over 200 nm. When exposure treatment is applied to a semiconductor wafer by using exposure light with a wavelength over 200 nm, a photomask is used. The photomask is provided with an opaque pattern of a resist layer on an organic layer which is photoabsorptive in reaction to exposure light.