The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Apr. 23, 1999
Applicant:
Inventors:
Tadaaki Honma, Annaka, JP;
Takeshi Arai, Annaka, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/600 ; C30B 3/500 ;
U.S. Cl.
CPC ...
C23C 1/600 ; C30B 3/500 ;
Abstract
In an apparatus for vapor phase growth of silicon single crystal thin films, in-plane uniformity of susceptor temperature is improved and film thickness of a silicon single crystal thin film is uniformized. The base material of a lift pin provided in a pocket of a susceptor is changed to a base material lower in thermal conductivity than a base material of the susceptor , by which local decreases in susceptor temperature in the vicinity of the lift pin are prevented. As the base material of the lift pin , SiC, carbon of a desired grade and quartz are preferred.