The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Nov. 08, 2000
Applicant:
Inventors:
Shin Okamoto, Kofu, JP;
Shunichi Iimuro, Kitakoma-gun, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/13065 ;
Abstract
Contact holes ( ) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film ( ) down to a wiring layer ( ) at a deep position and a wiring layer ( ) at a shallow position, respectively, which are embedded in the insulating film ( ). A process gas containing C F , CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C F gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film ( ) is etched with the plasma to form the contact holes ( ).