The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
May. 25, 2001
Applicant:
Inventors:
Elizabeth Dobisz, San Jose, CA (US);
Walter J. Dressick, Ft. Washington, MD (US);
Susan L. Brandow, Springdale, MD (US);
Mu-San Chen, Ellicott City, MD (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 ; G03C 5/00 ; G03C 5/58 ;
U.S. Cl.
CPC ...
G03F 7/00 ; G03C 5/00 ; G03C 5/58 ;
Abstract
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.