The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Jul. 13, 2001
Andre G. Cardoso, Braga, PT;
Alan C. Janos, Darnestown, MD (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile