The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2003

Filed:

Dec. 05, 2001
Applicant:
Inventors:

Satoru Suzuki, Ibaraki, JP;

Hirohito Miyashita, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C21D 1/00 ; F27B 1/400 ; F27B 9/12 ; H05B 1/00 ;
U.S. Cl.
CPC ...
C21D 1/00 ; F27B 1/400 ; F27B 9/12 ; H05B 1/00 ;
Abstract

A tungsten powder having a powder specific surface of 0.4 m /g or more is hot-pressed at a temperature of 1,600° C. or more and then subjected to HIP at a temperature of 1,700° C. or more without capsuling, whereby a tungsten target for sputtering is manufactured that has a relative density of 99% or more and an average crystal grain size of 100 &mgr;m or less. This manufacturing method can manufacture, stably at a low cost, a tungsten target having such a high density and fine crystal structure as cannot be attained by the conventional pressure sintering method, and can greatly decrease the number of particle defects on a film produced by using such a target.


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