The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
May. 02, 2001
Applicant:
Inventors:
Samuel Pan, Hsin-Chu, TW;
Chia-Hsing Chen, Hsin-Chu, TW;
Chun-Jung Lin, Hsin-Chu, TW;
Minnie Hsiung, Hsin-Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A semiconductor substrate having a source/drain region is initially provided, wherein a channel is formed in the space between the source/drain region within the semiconductor substrate. Then the oxide-nitride-oxide layers are formed on the semiconductor substrate, wherein the nitride layer is a charge trapping layer. Afterward, an electrically conductive material layer such as a gate is formed on and overlays the oxide-nitride-oxide layers. Subsequently, the memory cell is programmed by ultraviolet light irradiation to increase the threshold voltage of the memory cell.