The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Apr. 09, 2002
Applicant:
Inventors:
Joseph T. Verdeyen, Savoy, IL (US);
Wayne L. Johnson, Phoenix, AZ (US);
Murray D. Sirkis, Tempe, AZ (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 2/732 ; H01L 2/166 ; H01L 3/1302 ; H01L 2/1306 ; G01L 2/130 ; H05B 3/126 ;
U.S. Cl.
CPC ...
G01R 2/732 ; H01L 2/166 ; H01L 3/1302 ; H01L 2/1306 ; G01L 2/130 ; H05B 3/126 ;
Abstract
A method and system for measuring at least one of a plasma density and an electron density (e.g., in a range of 10 to 10 electrons/cm ) using plasma induced changes in the frequency of a microwave oscillator. Measurement of at least one of the plasma density and the electron density enables plasma-assisted processes, such as depositions or etches, to be controlled using a feedback control. Both the measurement method and system generate a control voltage that in turn controls a plasma generator to maintain at least one of the plasma density and the electron density at a pre-selected value.