The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
May. 03, 2001
Hye-Soo Shin, Seoul, KR;
Suk-Joo Lee, Yongin-si, KR;
Jeung-Woo Lee, Suwon-si, KR;
Dae-Youp Lee, Gunpo-si, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of forming fine patterns in a semiconductor device through a double photo lithography process. A layer to be etched and a hard mask layer are sequentially formed on a semiconductor substrate. A first photo resist pattern is formed on the hard mask layer. A first hard mask layer pattern is formed by etching the hard mask layer using the first photo resist pattern. After the first photo resist pattern is removed, a second photo resist pattern is formed on the resultant structure. A second hard mask layer pattern is formed by etching the first hard mask layer pattern using the second photo resist pattern. The layer to be etched is then etched using the second hard mask layer pattern after the second photo resist pattern has been removed, resulting in patterns have line edges without rounding.