The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Mar. 18, 2002
Taiwant Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for forming a self-aligned capping layer over a metal filled feature in a multi-layer semiconductor device including providing an anisotropically etched feature included in a substrate; blanket depositing a first barrier layer over the anisotropically etched feature to prevent diffusion of a metal species into the substrate; filling the anisotropically etched feature with a metal to form a metal filled feature substantially filled with metal; planarizing the substrate surface to include forming an exposed surface of the metal filled feature; and, selectively depositing a second barrier layer to cover the exposed surface of the metal filled feature to form a capping layer.