The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Mar. 31, 2000
Fu-Cheng Wang, Sunnyvale, CA (US);
Constantin Bulucea, Milpitas, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
To furnish an IGFET ( or ) with an asymmetrically doped channel zone ( or ), a mask ( ) is provided over a semiconductor body and an overlying electrically insulated gate electrode ( P or P). Ions of a semiconductor dopant species are directed toward an opening ( ) in the mask from two different angular orientations along paths that originate laterally beyond opposite respective opening-defined sides of the mask. The location and shape of the opening are controlled so that largely only ions impinging from one of the angular orientations enter the intended location for the channel zone. Ions impinging from the other angular orientation are shadowed by the mask from entering the channel zone location. Although the ions impinging from this other angular orientation do not significantly dope the channel zone location, they normally enter the semiconductor body elsewhere, e.g., the intended location for the channel zone of another IGFET.