The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Jan. 11, 2001
Gerald R. Dietze, Portland, OR (US);
Sean G. Hanna, Portland, OR (US);
Zbigniew J. Radzimski, Brush Prairie, WA (US);
SEH America, Inc., Vancouver, WA (US);
Abstract
A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-doped silicon, pulling a nitrogen-doped silicon crystal from the melt using a seed crystal according to the Czochralski technique, forming a silicon wafer from the silicon crystal, the silicon wafer having an edge, and rounding the edge of the silicon wafer. The method may optionally include applying an electrical potential across the crucible while pulling the nitrogen-doped silicon crystal from the melt.