The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Dec. 03, 2001
Applicant:
Inventors:
Chung-Min Liu, Kaohsiung, TW;
Chih-Wei Hsu, Hsinchu, TW;
Ming-Jer Kao, Tainan, TW;
Jeng-Hua Wei, Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/128 ;
U.S. Cl.
CPC ...
H01L 2/128 ;
Abstract
A structure and manufacturing method of an SiC dual metal trench diode. P-type impurity is doped into the bottom of the trench layer of the dual metal trench Schottky diode to eliminate leakage current or avalanche breakdown in the corner of the trench layer in order to increase the concentration of the epitaxial layer. N-type impurity can also be doped into the region between the Schottky contact metal and the epitaxial layer to adjust the Schottky barrier and thus reduce forward voltage required for current to flow through.