The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Mar. 06, 2002
Jen-Tian Hsu, Banchiau, TW;
Wen-Hsiang Tang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for forming a shallow trench isolation feature to avoid acidic etching of trench sidewalls including providing a semiconductor substrate having an overlying silicon nitride layer; photolithographically patterning the silicon nitride layer to expose a portion of the silicon nitride layer; anisotropically etching through a thickness of the portion of the silicon nitride layer to form a hardmask opening exposing a portion of the semiconductor substrate; blanket depositing a polymer layer according to a plasma deposition process including at least partially covering the sidewalls and bottom portion of the hardmask opening; and, anisotropically etching a trench opening through a thickness portion of the semiconductor substrate according to the hardmask opening.