The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Nov. 16, 2001
Applicant:
Inventors:
Akiko Kobayashi, Tokyo, JP;
Atsushi Sekiguchi, Tokyo, JP;
Tomoaki Koide, Tokyo, JP;
Minjuan Zhang, Ann Arbor, MI (US);
Hideki Sunayama, Tokyo, JP;
Shiqin Xiao, Mie-ken, JP;
Kaoru Suzuki, Fuchu, JP;
Assignee:
Anelva Corporation, Fuchu, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 2/802 ; C25D 5/50 ;
U.S. Cl.
CPC ...
C23C 2/802 ; C25D 5/50 ;
Abstract
A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.