The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Oct. 23, 2001
Robert J. Falster, London, GB;
Harold W. Korb, Town & Country, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A process for growing single crystal silicon ingots of which portions are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. A first portion of the ingot cools to a temperature which is less than a temperature T at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown, while a second portion remains at a temperature above T . The second portion of the ingot is subsequently maintained at a temperature above T to produce a portion which is substantially free of agglomerated intrinsic point defects.