The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Nov. 04, 2002
Applicant:
Inventor:
Chi-Tung Huang, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A method of processing dielectric layers in FeRAM and the structure of the like are provided. A FeRAM having a barrier layer, a first electrode, a second electrode, and a ferroelectric material is sandwiched between two layers of gradient dielectric layers. These gradient dielectric layers have changing refraction index from one side to the other side. As a result, these gradient dielectric layers prevent hydrogen from damaging the FeRAM structure. The change in refraction index is achieved by adjusting the ratio and deposition power of the SiH4 and N2O during plasma enhanced chemical vapor deposition of the gradient dielectric layers.