The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Sep. 10, 2002
Chun-Che Chen, Hsinchu, TW;
Fang-Yu Yeh, Hsinchu, TW;
Han-Chih Lin, Hsinchu, TW;
Chin-Sheng Chen, Hsinchu, TW;
ProMos Technologies, Inc., , TW;
Abstract
A method for forming contacts in a semiconductor device including a plurality of active devices formed over a substrate that includes depositing a first layer of dielectric material over the substrate and plurality of active devices, forming a first opening in the first layer of dielectric material, depositing a second layer of dielectric material over the first layer of dielectric material and in the first opening, providing a mask over the second layer of dielectric material, wherein the mask material is distinguishable over silicon oxides, and forming a second opening and a third opening in the second layer of dielectric material, wherein the second opening is aligned with the first opening and exposes a first silicide of a first active device, and the third opening exposes one of diffused regions of a second active device.