The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
May. 30, 1997
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for forming a barrier layer upon an electrode contact. There is first provided a silicon substrate layer having an electrode contact region formed within the silicon substrate layer. There is then formed over the silicon substrate layer a titanium layer, where the titanium layer contacts the electrode contact region of the silicon substrate layer. There is then processed thermally the titanium layer in a nitrogen containing atmosphere to form a titanium silicide layer in contact with the electrode contact region and a titanium nitride layer formed thereover, where the titanium layer is completely consumed in forming the titanium silicide layer and the titanium nitride layer. Finally, there is formed upon the titanium nitride layer a barrier layer.