The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Mar. 20, 2001
Applicant:
Inventors:
Manfred Horstmann, Dresden, DE;
Karsten Wieczorek, Reichenberg-Boxdorf, DE;
Frederick N. Hause, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/1336 ;
Abstract
A transistor device is disclosed, having an insulating material disposed between the gate electrode and the drain and source lines, wherein the dielectric constant of the insulating material is 3.5 or less. Accordingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor with decreased cross talk noise.