The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Feb. 01, 2000
Shulin Wang, Campbell, CA (US);
Ming Xi, Milpitas, CA (US);
Zvi Lando, Palo Alto, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH ) and titanium tetrachloride (TiCl ), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH :TiCl ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated from molecular hydrogen (H ). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications.