The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Aug. 27, 1999
Jörg Horzel, Leuven, BE;
Jozef Szlufcik, Kessel-lo, BE;
Mia Honoré, Kortenberg, BE;
Johan Nijs, Linden-Lubbeek, BE;
IMEC vzw, , BE;
Abstract
The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate ( ) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate ( ); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate ( ) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate ( ), the dopant from said solids-based dopant source diffusing directly into said substrate ( ) to form a first diffusion region ( ) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate ( ) to form a second diffusion region ( ) in at least some areas of said substrate ( ) not covered by said pattern; and step 3) forming a metal contact pattern ( ) substantially in alignment with said first diffusion region ( ) without having etched said second diffusion region ( ) substantially.