The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Mar. 14, 2000
Andres Bryant, Essex Junction, VT (US);
William F. Clark, Jr., Essex Junction, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
Minh H. Tong, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An SOI multiple FET structure is provided that comprises a substrate having a substrate layer on an insulator layer. The SOI multiple FET structure includes distal diffusion regions in the substrate layer and a central diffusion region in the substrate layer. The central diffusion region has a width and extends from a surface of the substrate layer downward into contact with the insulator layer along a portion of the width and extends only partially into the substrate layer along another portion of the width. The SOI multiple FET structure also includes a pair of gates on the surface of the substrate layer each overlapping one of the distal diffusion regions and the central diffusion region; and a pair of body regions in the substrate layer each under one of the gates for forming a channel between the one of the distal diffusion regions and the central diffusion region. The body regions are in electrical communication under the another portion of the width of the central diffusion region. Methods for forming the SOI multiple FET structure are also provided.