The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2003

Filed:

Feb. 20, 2002
Applicant:
Inventor:

Chewnpu Jou, Hsinchu Hsien, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/14 ;
U.S. Cl.
CPC ...
H03F 3/14 ;
Abstract

The present invention provides an integrated inductor device having a high Q value, a low stray capacitance, and a small area that are compatible with conventional RF CMOS process. The inductor device has a plurality of conductive paths collocated in the same space for each gate, drain, and source of a RF transistor. The conductive paths are formed as a square-loop with 90 degrees turns with a space between adjacent conductive paths. Wherein the conductive paths are formed inside while staying geometrically parallel to each other. The adjacent conductive path carries a current in the same direction so all the conductive paths give positive contribution to a total magnetic flux.


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