The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Aug. 18, 2000
Katsuya Hayano, Ome, JP;
Norio Hasegawa, Nishitama, JP;
Akira Imai, Hachiouji, JP;
Naoko Asai, Higashimurayama, JP;
Eiji Tsujimoto, Ome, JP;
Takahiro Watanabe, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In order to inhibit or prevent a pattern abnormality such as the deformation or misalignment of a pattern of a semiconductor integrated circuit device, a light intensity is calculated based on the pattern data DBP of a mask and the aberration data DBL of a lens of a pattern exposure device (step ) and then the results of the light intensity calculation is compared with the results of the light intensity calculated on condition that the lens of the pattern exposure device has no aberration (step ), and then a pattern data exceeding an allowable level, of the pattern data of the mask, is corrected according to the amount of correction calculated on the basis of the results of the comparison such that the pattern data does not exceed the allowable level (step ). The mask is manufactured by using the mask making data DBM after the correction and then is mounted on the pattern exposure device to transfer a predetermined pattern to a semiconductor wafer.