The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
May. 31, 2002
Yuuki Kamiura, Hyogo, JP;
Hiroshi Tobimatsu, Tokyo, JP;
Kouji Oda, Tokyo, JP;
Mahito Sawada, Tokyo, JP;
Koji Shibata, Tokyo, JP;
Hiroyuki Kawata, Tokyo, JP;
Other;
Abstract
A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film using, as a mask, a polyimide film having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film prior to performing anisotropic etching on a silicon oxide film . During the heat treatment for imidizing the polyimide film , since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film does not come unstuck from the silicon nitride film . Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.