The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
May. 26, 2000
Applicant:
Inventor:
Risa Nakase, Sagamihara, JP;
Assignee:
Tokyo Electron Limited, Tokyo-To, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
As thin-film deposition gases, cyclic C F gas and a hydrocarbon gas, e.g., C H gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof. Alternatively, cyclic C F gas is used as a thin-film deposition gas, and activated as plasma under a pressure of, e.g., 0.06 Pa, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof.