The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Oct. 03, 2001
Tsing-Chow Wang, Cupertino, CA (US);
Aptos Corporation, Milpitas, CA (US);
Abstract
Within both a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is first provided a substrate. Within the method, there is then formed over the substrate a patterned bond pad layer. There is then formed over the patterned bond pad layer a barrier layer comprising: (1) a first titanium-tungsten alloy layer; (2) a titanium-tungsten alloy nitride layer formed upon the first titanium-tungsten alloy layer; and (3) a second titanium-tungsten alloy layer formed upon the titanium-tungsten alloy nitride layer. Finally, there is then formed upon the barrier layer a seed layer which comprises a titanium layer formed upon the barrier layer. The method contemplates a microelectronic fabrication fabricated employing the method. The barrier layer provides enhanced barrier properties within the microelectronic fabrication within which is formed the barrier layer.