The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Jul. 31, 2000
Scott Brad Herner, Palo Alto, CA (US);
Manuel Anselmo Hernandez, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of decreasing the growth rate of silicon dioxide films on a silicon nitride pad on a silicon wafer wherein the decrease in growth rate of the silicon dioxide results in a self-planarized film on the wafer is provided. Also provided is a method of pretreating said silicon wafer wherein said wafer is contacted with a chemical, such as hydrogen peroxide, isopropyl alcohol or acetone and air-dried prior to silicon dioxide deposition. Additionally, selective oxidation sub-atmospheric chemical vapor deposition (SELOX SACVD) uses an ozone-activated tetraethylorthosilicate process to deposit said silicon dioxide on said wafer.