The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Aug. 06, 2001
Shuji Tobashi, Hiratsuka, JP;
Tadashi Ohashi, Kudamatsu, JP;
Shinichi Mitani, Numazu, JP;
Hideki Arai, Numazu, JP;
Hidenori Takahashi, Numazu, JP;
Other;
Abstract
A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×10 to 6.7×10 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min and at a reaction temperature of from 600° C. to 800° C.