The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2003

Filed:

Jul. 06, 2001
Applicant:
Inventor:

John H. Givens, San Antonio, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

In one aspect, the invention includes a processing method, comprising: a) providing a substrate having a high aspect ratio opening therein; b) forming a metal-comprising layer over the opening; c) providing a first pressure against the metal-comprising layer; and d) ramping the pressure that is against the metal-comprising layer to a second pressure at a rate of from about 1 atmosphere per second about 100 atmospheres per second. In another aspect, the invention includes a processing method, comprising: a) providing a substrate having a high aspect ratio opening therein, the opening having a widest portion and a width at said widest portion; b) in a first chamber, sputter depositing a metal to form a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the width of the opening; c) transferring the substrate to a second chamber having a first pressure therein; and d) while the substrate is within the second chamber, ramping the pressure within the second chamber at a rate of at least about 20 atmospheres per second to a second pressure.


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